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We conclude that coupled electrothermal simulation can be employed to design FL 2D devices with improved performance.Ĭastro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S., Geim, A.K.: The electronic properties of graphene. Joule heating impacts performance due to relatively poor thermal conductance to the substrate and this impact, along with the location of the hot spot in the FL stack, varies with carrier screening length of the material. We show that overall conductance improves with increasing thickness (number of layers) at small gate voltages, but exhibits a peak for large gate voltages. Here, we employ an electrothermal model to study FL field-effect devices made from transition metal dichalcogenides MoS 2 and WSe 2 and examine the effect of both electrical and thermal interlayer resistances, as well as the thermal boundary resistance to the substrate, on device performance. Few-layer (FL) 2D devices retain the desirable thinness of their monolayer cousins while boosting carrier mobility. It is found that atomically thin BN nanosheets are less effective in electric field screening, but the screening capability of BN shows a relatively weak dependence on the layer thickness.While two-dimensional (2D) materials have emerged as a new platform for nanoelectronic devices with improved electronic, optical, and thermal properties, and their heightened sensitivity to electrostatic and mechanical interactions with their environment has proved to be a bottleneck. Here, electric force microscopy along with theoretical calculations based on both state-of-the-art first-principles calculations with van der Waals interactions under consideration, and nonlinear Thomas-Fermi theory models are used to investigate the dielectric screening in high-quality BN nanosheets of different thicknesses. To optimize the performance of these 2D devices, it is essential to understand the dielectric screening properties of BN nanosheets as a function of the thickness. Two-dimensional (2D) hexagonal boron nitride (BN) nanosheets are excellent dielectric substrate for graphene, molybdenum disulfide, and many other 2D nanomaterial-based electronic and photonic devices. 218-223, doi: 10.1021/nl503411a.ĭielectric screening in atomically thin boron nitride nanosheets Dielectric screening in atomically thin boron nitride nanosheets Li, Lu Hua, Santos, Elton J., Xing, Tan, Cappelluti, Emmanuele, Roldán, Rafael, Chen, Ying, Watanabe, Kenji and Taniguchi, Takashi 2014, Dielectric screening in atomically thin boron nitride nanosheets, Nano letters, vol.
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